Integrated Circuit having a MOM Capacitor and Method of Making Same

ABSTRACT

An integrated circuit can include a MOM capacitor formed simultaneously with other devices, such as finFETs. A dielectric layer formed on a substrate has a first semiconductor fin therein and a second semiconductor fin therein. Respective top portions of the fins are removed to form respective recesses in the dielectric layer. First and second electrodes are formed in the recesses. The first and second electrodes and the interjacent dielectric layer form a MOM capacitor.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a continuation of U.S. patent application Ser. No. 15/132,001, filed on Apr. 18, 2016, and entitled “Integrated Circuit Having a MOM Capacitor and Method of Making Same,” which application is a divisional of U.S. patent application Ser. No. 13/289,666, filed on Nov. 4, 2011, and entitled “Integrated Circuit Having a MOM Capacitor and Method of Making Same,” now U.S. Pat. No. 9,318,431, issued on Apr. 19, 2016, which applications are incorporated herein by reference.

BACKGROUND

Fin field effect transistor (FinFET) devices represent a next step in the continuous evolvement of semiconductor transistor technology. As contrasted to conventional planar transistors, finFET devices raise numerous issues relating to integration with other circuit devices in order to improve device performance and surface area utilization efficiency.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:

FIGS. 1a, 1b, and 1c illustrate in perspective view, cross-sectional view, and top view, respectively, an illustrative embodiment MOM capacitor structure;

FIGS. 2a through 7b illustrate steps in the manufacture of the structure illustrated in FIGS. 1a and 1 b;

FIGS. 8a through 9b illustrates steps in the manufacture of a second illustrative embodiment MOM capacitor; and

FIGS. 10a and 10b illustrate perspective view and cross-sectional view of an illustrative embodiment MOM capacitor structure.

FIG. 11 illustrates in perspective view an illustrative embodiment MOM capacitor structure and an illustrative embodiment finFET device.

DETAILED DESCRIPTION

FIG. 1a represents in perspective view a first embodiment metal oxide metal (MOM) capacitor structure 1 formed using fin field effect transistor (finFET) technology and structures. FIG. 1b represents MOM capacitor 1 in cross-sectional view through the line indicated in FIG. 1 a.

MOM capacitor 1 includes a first electrode 2 and a second electrode 6. First electrode 2 is formed atop a first fin structure 4 and second electrode 6 is formed atop a second fin structure 8. Dielectric material 10, providing the capacitor dielectric function, is formed between first electrode 2 and second electrode 6. In this way a MOM capacitor is formed of first electrode 2, dielectric material 10, and second electrode 6. In the illustrated embodiment, MOM capacitor 1 has two first electrodes 2 formed atop two respective first fin structures 4. This is a design choice, and one skilled in the art will recognize a number of alternative embodiments, including two or more first electrodes, two or more second electrodes, a single first electrode, and single second electrode, and the like, all of which fall within the contemplated scope of the present disclosure.

First fin structure 4 and second fin structure 8 are formed atop a major surface of semiconductor-on-insulator (SOI) substrate in the illustrated embodiment. The substrate includes a bulk layer 12 (see FIGS. 2a and 2b ), such as silicon or other semiconductor material, on which is formed SOI dielectric layer 14 (see FIGS. 2a and 2b ). SOI dielectric layer 14 may be silicon oxide, for example. In other embodiments, other materials may be used for bulk layer 12 and SOI dielectric layer 14. Electrical contacts 3, 5 are formed contacting first electrode 2 and second electrode 6, respectively. In some embodiments, contacts 3, 5 are formed overlying electrodes 2, 6 and make electrical contact to the respective electrodes by way of vias 7, 9 respectively, as is known in the art.

The MOM structure illustrated in FIGS. 1a and 1b provides the advantage that the structure may be formed simultaneously with a finFET device, without the need for additional manufacturing steps. This is illustrated in the example of FIG. 11 where an illustrative embodiment finFET device 1100 is formed simultaneously with the MOM capacitor structure 1. One skilled in the art will recognize that counter-part structures to fins 4 and 8 (e.g. a counter-part third semiconductor fin 1200) may be formed simultaneously with fins 4 and 8, doped to have a source and drain formed therein (e.g. source region 1200 s and drain region 1200 d of third semiconductor fin 1200), and covered with a gate oxide (e.g. gate oxide 1300 covering third semiconductor fin 1200) and a gate electrode (e.g. gate electrode 1400 covering a portion of the third semiconductor fin 1200). This may reduce manufacturing costs and complexity and increase manufacturing yield. Another advantageous feature of the illustrated embodiment is that the MOM capacitor structure 1, by utilizing thin fin structures 4 and 8, is compact and provides for efficient space utilization.

An illustrative embodiment process for manufacturing MOM capacitor 1 will now be provide with reference to FIGS. 2a through 7b . FIG. 2a illustrates in perspective view and FIG. 2b illustrates in cross-sectional view an intermediate phase in the manufacture of MOM capacitor 1. An SOI substrate comprising bulk layer 12, SOI dielectric layer 14, and semiconductor layer 16 is provided. The details of an SOI substrate and the manufacture thereof are well known, and hence are not included herein for the sake of brevity and clarity. As will be apparent to those skilled in the art, semiconductor layer 16 is the layer in which will be formed, e.g., first fin structure 4 and second fin structure 8, as illustrated in FIGS. 1a and 1b , and as discussed further in the following description.

Pad oxide 18 and hard mask 20 are formed atop semiconductor layer 16 using known techniques. Pad oxide 18 may be, for instance, a thermally grown or chemical vapor deposition (CVD) deposited silicon oxide layer. Hard mask 20 may be, as an example, a silicon nitride layer. Other materials may be used as well. Also illustrated in FIGS. 2a and 2b is photo-sensitive layer 22. In the stage of manufacturing illustrated in FIG. 2, photo-sensitive layer 22 has been patterned using known mask and photolithography techniques. Photo-sensitive layer may be a photo-sensitive polymer, such as a photoresist material typically employed in the manufacture of integrated circuits.

The purpose of hard mask 20 and pad oxide 18 is to provide for the faithful reproduction of a pattern from patterned photo-sensitive layer 22 into underlying semiconductor layer 16, while at the same time protecting the upper surface of semiconductor layer 16 during the etch process. The result of this reproduction is the formation of fin structures 4 and 8, as illustrated in FIG. 3 (which includes FIGS. 3a and 3b ). As shown, the pattern of photosensitive layer 22 is transferred to semiconductor layer 16 using well known etch process, such as an anisotropic plasma etch process for form fin structures in semiconductor layer 16. One skilled in the art will recognize numerous processes that are sufficient for the etching of semiconductor layer 16 using routine experimentation; hence the details of the etch process are not discussed herein.

It should be noted that the process of etching a pattern into semiconductor layer 16 is also employed in the formation of finFET devices. Hence, it is contemplated that in some embodiments, semiconductor layer 16 will be patterned in a first region to form fin structures for a resulting MOM capacitor (such as illustrated in FIG. 3), while simultaneously, semiconductor layer 16 will be patterned in a second region to form fin structures for a resulting finFET device (not shown in FIG. 3). Likewise, unless specifically excluded herein, each of the following process steps can be performed simultaneously with process steps to concurrently form a finFET device. Note that in the case illustrated in FIG. 3 the etching process completely removes photo-sensitive layer 22. Alternatively, remaining portions of photo-sensitive layer 22 can be removed by ashing, an ozone plasma, or other known techniques for removing residual photosensitive materials. In other embodiments, residual photo-sensitive material can be removed in a subsequent processing step.

Dielectric material 10 is next formed, as illustrated in FIG. 4 (which includes FIG. 4a and FIG. 4b ). In an intermediate stage of manufacture, as shown in FIG. 4, dielectric material 10 completely surrounds the fin structures 4 and 8. Dielectric material 10 may be a silicon oxide material formed by CVD, PVD, and the like, or a high-k material formed by CVD, PVD, ALD, and the like. In some embodiments, dielectric material 10 may be referred to as shallow trench isolation (STI) dielectric, in reference to the known materials and process steps for forming STI dielectrics. In embodiments wherein fin structures (such as finFETs and MOM capacitor 1) are formed simultaneously with planar devices (such as planar transistors, for instance), dielectric material 10 may be formed simultaneously with shallow trench isolation for the planar devices.

FIG. 5a illustrates in perspective view and FIG. 5b illustrates in cross-sectional view the results of a planarizing process performed on the structure. In particular, dielectric material 10 is planarized and its top surface brought level to the top surface of the fin structures 4, 8. In this process, any residual photo-sensitive layer 22, as well as any remaining portions of hard mask 20 and pad oxide 18 may also be removed. In some embodiments, dielectric material 10 is planarized using a chemical mechanical polish (CMP) process. In other embodiments, dielectric material 10 may be planarized using an etch-back process, as will be apparent to those skilled in the art. As illustrated in FIG. 5, the top surfaces of fin structures 4, 8 are now exposed.

In a next process step, fin structures 4, 8 are recessed back, as illustrated in FIGS. 6a and 6b , which illustrate the resulting structure in perspective view and cross-sectional view, respectively. As an example, fin structures 4, 8 are originally formed having a height (i.e. extending above the surface of SOI dielectric layer) of from about 600 nm to about 1200 nm. After the recess process, fin structures 4, 8 have a height of from about 300 nm to about 500 nm. This recess process can be performed in a variety of ways. In an illustrative embodiment, fin structures 4, 8 are recessed back by, for instance, a dry etch process. The etching process may be performed under a pressure of from about 1 mTorr to about 1000 mTorr, a power of from about 50 W to about 1000 W, a bias voltage of from about 20 V to about 500 V, and at a temperature of from about 40° C. to about 60° C., using, e.g., HBr and/or Cl₂ as etch gases.

First electrode 2 and second electrode 6 are next formed, as illustrated in perspective view by FIG. 7a and cross-sectional view by FIG. 7b . As shown, the recesses 23 in dielectric material 10 that result from the etch process on fin structure 4, 8 are filled with a conductive material for forming first electrode 2 and second electrode 6. The electrodes may be formed of a suitable conductive material, such as aluminum, copper, tungsten, titanium, a metal silicide, a conductive ceramic, doped silicon, or the like. In some embodiments, one or more barrier and/or seed layers may be formed along the bottom and sidewalls of recesses 23 prior to forming the conductive electrode material. For instance a barrier layer of one or more sub-layers of titanium and titanium nitride may be formed in recesses 23 prior to forming, e.g., a tungsten conductive electrode. Alternatively, electrodes could be formed of highly doped and silicided polysilicon material. In yet other embodiments, a thin seed layer could be formed in recesses 23 prior to forming the electrodes using an electroplating or electroless plating technique.

Other techniques for forming electrodes 2 and 6 will be apparent to those skilled in the art. These include but are not limited to chemical or vapor deposition, sputter deposition, plating, and the like. As shown in FIG. 7, first electrode 2 and second electrode 6 have top surfaces that are level with, or co-terminus with, the top of dielectric material 10. This may be accomplished by careful control of the deposition process. Alternatively, conductive material could be formed so as to overlie the top surface of dielectric material 10, followed by a CMP (or etch back) process to planarize the conductive material and bring it level with dielectric material 10, thus forming electrodes 2 and 6. As noted previously, additional process steps, such as the formation of contacts to electrodes 2, 6 may be performed to electrically couple MOM capacitor 1 to other circuit elements, to gang multiple first electrodes 2, or second electrodes 6, together, and the like.

A second illustrative embodiment MOM capacitor is illustrated in perspective view in FIG. 8a and cross-sectional view in FIG. 8b . This second embodiment could also be employed using a SOI substrate, but is particularly advantageous for using a bulk substrate 12, as illustrated in FIGS. 8a and 8b . The second embodiment is manufactured using the similar processes illustrated in FIGS. 2a through 6b , albeit with a bulk substrate 12 rather than an SOI substrate. The manufacturing process diverges from that process for the first illustrative embodiment at this stage, however. In the second embodiment, recesses 23 (illustrated in FIGS. 6a and 6b ) are partially, but not completely, filled with a liner dielectric layer 24. This is accomplished by forming the liner dielectric layer 24 on the bottom and sidewalls of the recesses in dielectric material 10. In this way, the subsequently formed electrodes are electrically isolated from bulk substrate 12, thus avoiding undesirable current paths through the substrate.

In an illustrative embodiment, recesses 23 have a width of from about 5 to about 30 nm, corresponding to the thickness of fin structures 4, 8. Liner dielectric material 24 may comprise silicon oxide, a high-k dielectric comprising a metal oxide. Examples of metal oxides used for high-k dielectrics include oxides of Li, Be, Mg, Ca, Sr, Sc, Y, Zr, Hf, Al, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and mixtures thereof. Liner material 24 is formed to a thickness of from about 5 nm to about 15 nm, as an example, on the sidewalls and bottom of the recess. Liner dielectric material 24 can be formed in recesses 23 by, e.g., thermal oxidation for a silicon oxide, or a CVD or similar process for a high-k dielectric.

Because liner dielectric material 24 only partially fills recesses 23, recesses 25 remain after formation of liner dielectric material 24, as best illustrated in FIG. 8b . These recesses are thin filled with a conductive material, as illustrated in FIGS. 9a (perspective view) and 9 b (cross-sectional view), thus forming first electrode 2 and second electrode 6. Illustrative materials and processes for forming electrodes 2 and 6 were discussed above with reference to FIGS. 7a and 7b , and hence are not repeated herein for the sake of brevity and clarity.

An advantageous feature of the embodiment illustrated in FIGS. 9a and 9b is the introduction of the additional dielectric material, i.e. liner dielectric material 24, allows for one to better engineer the capacitance value of the resulting MOM structure, by careful design of the material and thickness of liner dielectric material 24. Other advantageous features include the ability to form capacitors and transistors using the same process steps.

Yet another embodiment is illustrated in FIGS. 10a and 10b . This embodiment is similar to that illustrated in FIGS. 8a /8 b and 9 a/9 b, except that in this embodiment fins 4 and 8 are removed completely, allowing recesses 23 to extend to the surface of substrate 12. Liner dielectric is formed on the sidewalls and bottoms of recesses 23, leaving recesses 25 within, which are in turn filled with conductive material to form electrodes 2 and 6, as shown in FIG. 10. By removing the fins 4, 8, the capacitor plates formed by electrodes 2, 6 are deeper and hence provide additional capacitive value.

In an embodiment, a device includes: a substrate having a first region and a second region; a shallow trench isolation (STI) region over the substrate; a capacitor in the first region of the substrate, the capacitor including: a first semiconductor fin extending from the substrate; a first capacitor electrode over the first semiconductor fin; a second semiconductor fin extending from the substrate, a first portion of the STI region being disposed between the first semiconductor fin and the second semiconductor fin; and a second capacitor electrode over the second semiconductor fin, a second portion of the STI region being disposed between the first capacitor electrode and the second capacitor electrode, the first portion and the second portion of the STI region having the same width; and a transistor in the second region of the substrate, the transistor including: a third semiconductor fin extending from the substrate, a third portion of the STI region being disposed between the second semiconductor fin and the third semiconductor fin; a gate electrode over the third semiconductor fin and the STI region; and a source region and a drain region in the third semiconductor fin adjacent the gate electrode.

In some embodiments of the device, the capacitor further includes: a fourth semiconductor fin extending from the substrate, a fourth portion of the STI region being disposed between the second semiconductor fin and the fourth semiconductor fin; and a third capacitor electrode over the fourth semiconductor fin, a fifth portion of the STI region being disposed between the second capacitor electrode and the third capacitor electrode, the fourth portion and the fifth portion of the STI region having the same width. In some embodiments, the device further includes: a first conductive line extending over the first semiconductor fin, the second semiconductor fin, and the fourth semiconductor fin; a first conductive via electrically connecting the first conductive line to the first capacitor electrode; and a second conductive via electrically connecting the first conductive line to the third capacitor electrode. In some embodiments, the device further includes: a second conductive line extending over the first semiconductor fin, the second semiconductor fin, and the fourth semiconductor fin; and a third conductive via electrically connecting the second conductive line to the second capacitor electrode. In some embodiments of the device, the first capacitor electrode and the third capacitor electrode are electrically isolated from the second capacitor electrode by the STI region. In some embodiments of the device, the capacitor further includes: a first dielectric layer extending along sides of the first capacitor electrode and being disposed between the first semiconductor fin and the first capacitor electrode; and a second dielectric layer extending along sides of the second capacitor electrode and being disposed between the second semiconductor fin and the second capacitor electrode. In some embodiments of the device, the first dielectric layer and the second dielectric layer include silicon oxide or a high-k dielectric including a metal oxide. In some embodiments of the device, the first capacitor electrode and the second capacitor electrode include aluminum, copper, tungsten, titanium, a metal silicide, a conductive ceramic, doped silicon, or a combination thereof. In some embodiments of the device, the substrate, the first semiconductor fin, the second semiconductor fin, and the third semiconductor fin are a same continuous semiconductor material. In some embodiments of the device, the substrate includes: a bulk semiconductor layer; and an insulating layer on the bulk semiconductor layer, the first semiconductor fin, the second semiconductor fin, and the third semiconductor fin being disposed on the insulating layer.

In an embodiment, a device includes: a substrate; a first semiconductor fin over the substrate; a first capacitor electrode over the first semiconductor fin, a width of the first capacitor electrode being less than or equal to a width of the first semiconductor fin; a second semiconductor fin over from the substrate; a second capacitor electrode over the second semiconductor fin, a width of the second capacitor electrode being less than or equal to a width of the second semiconductor fin; and a dielectric layer disposed around the first semiconductor fin, the second semiconductor fin, the first capacitor electrode, and the second capacitor electrode, top surfaces of the dielectric layer, the first capacitor electrode, and the second capacitor electrode being level.

In some embodiments, the device further includes: a third semiconductor fin over the substrate; and a third capacitor electrode over the third semiconductor fin, a width of the third capacitor electrode being less than or equal to a width of the third semiconductor fin, the dielectric layer being disposed around the third semiconductor fin and the third capacitor electrode, top surfaces of the dielectric layer and the third capacitor electrode being level. In some embodiments, the device further includes: a first conductive feature electrically connected to the first capacitor electrode and the third capacitor electrode; and a second conductive feature electrically connected to the second capacitor electrode. In some embodiments, the device further includes: a third semiconductor fin over the substrate, the dielectric layer being disposed around the third semiconductor fin; and a gate electrode over the third semiconductor fin and the dielectric layer. In some embodiments, the device further includes: a first dielectric layer around the first capacitor electrode, a combined width of the first dielectric layer and the first capacitor electrode being equal to the width of the first semiconductor fin; and a second dielectric layer around the second capacitor electrode, a combined width of the second dielectric layer and the second capacitor electrode being equal to the width of the second semiconductor fin.

In an embodiment, a device includes: a substrate having a top major surface; a capacitor dielectric layer on the top major surface of the substrate; a first capacitor electrode in the capacitor dielectric layer, the first capacitor electrode extending from a bottommost surface of the capacitor dielectric layer to a topmost surface of the capacitor dielectric layer; a second capacitor electrode in the capacitor dielectric layer, the second capacitor electrode extending from the bottommost surface of the capacitor dielectric layer to the topmost surface of the capacitor dielectric layer; a first conductive feature electrically connected to the first capacitor electrode; and a second conductive feature electrically connected to the second capacitor electrode.

In some embodiments, the device further includes: a semiconductor fin extending from the substrate, the capacitor dielectric layer surrounding the semiconductor fin; a gate electrode over a channel region of the semiconductor fin; a source region adjacent a first side of the channel region; and a drain region adjacent a second side of the channel region. In some embodiments, the device further includes: a first dielectric layer along sidewalls of the first capacitor electrode; and a second dielectric layer along sidewalls of the second capacitor electrode. In some embodiments of the device, the first dielectric layer and the second dielectric layer include silicon oxide or a high-k dielectric including a metal oxide. In some embodiments of the device, the first capacitor electrode and the second capacitor electrode include aluminum, copper, tungsten, titanium, a metal silicide, a conductive ceramic, doped silicon, or a combination thereof. 

What is claimed is:
 1. A device comprising: a substrate having a first region and a second region; a shallow trench isolation (STI) region over the substrate; a capacitor in the first region of the substrate, the capacitor comprising: a first semiconductor fin extending from the substrate; a first capacitor electrode over the first semiconductor fin; a second semiconductor fin extending from the substrate, a first portion of the STI region being disposed between the first semiconductor fin and the second semiconductor fin; and a second capacitor electrode over the second semiconductor fin, a second portion of the STI region being disposed between the first capacitor electrode and the second capacitor electrode, the first portion and the second portion of the STI region having the same width; and a transistor in the second region of the substrate, the transistor comprising: a third semiconductor fin extending from the substrate, a third portion of the STI region being disposed between the second semiconductor fin and the third semiconductor fin; a gate electrode over the third semiconductor fin and the STI region; and a source region and a drain region in the third semiconductor fin adjacent the gate electrode.
 2. The device of claim 1, wherein the capacitor further comprises: a fourth semiconductor fin extending from the substrate, a fourth portion of the STI region being disposed between the second semiconductor fin and the fourth semiconductor fin; and a third capacitor electrode over the fourth semiconductor fin, a fifth portion of the STI region being disposed between the second capacitor electrode and the third capacitor electrode, the fourth portion and the fifth portion of the STI region having the same width.
 3. The device of claim 2 further comprising: a first conductive line extending over the first semiconductor fin, the second semiconductor fin, and the fourth semiconductor fin; a first conductive via electrically connecting the first conductive line to the first capacitor electrode; and a second conductive via electrically connecting the first conductive line to the third capacitor electrode.
 4. The device of claim 3 further comprising: a second conductive line extending over the first semiconductor fin, the second semiconductor fin, and the fourth semiconductor fin; and a third conductive via electrically connecting the second conductive line to the second capacitor electrode.
 5. The device of claim 2, wherein the first capacitor electrode and the third capacitor electrode are electrically isolated from the second capacitor electrode by the STI region.
 6. The device of claim 1, wherein the capacitor further comprises: a first dielectric layer extending along sides of the first capacitor electrode and being disposed between the first semiconductor fin and the first capacitor electrode; and a second dielectric layer extending along sides of the second capacitor electrode and being disposed between the second semiconductor fin and the second capacitor electrode.
 7. The device of claim 6, wherein the first dielectric layer and the second dielectric layer comprise silicon oxide or a high-k dielectric comprising a metal oxide.
 8. The device of claim 1 wherein the first capacitor electrode and the second capacitor electrode comprise aluminum, copper, tungsten, titanium, a metal silicide, a conductive ceramic, doped silicon, or a combination thereof.
 9. The device of claim 1, wherein the substrate, the first semiconductor fin, the second semiconductor fin, and the third semiconductor fin are a same continuous semiconductor material.
 10. The device of claim 1, wherein the substrate comprises: a bulk semiconductor layer; and an insulating layer on the bulk semiconductor layer, the first semiconductor fin, the second semiconductor fin, and the third semiconductor fin being disposed on the insulating layer.
 11. A device comprising: a substrate; a first semiconductor fin over the substrate; a first capacitor electrode over the first semiconductor fin, a width of the first capacitor electrode being less than or equal to a width of the first semiconductor fin; a second semiconductor fin over from the substrate; a second capacitor electrode over the second semiconductor fin, a width of the second capacitor electrode being less than or equal to a width of the second semiconductor fin; and a dielectric layer disposed around the first semiconductor fin, the second semiconductor fin, the first capacitor electrode, and the second capacitor electrode, top surfaces of the dielectric layer, the first capacitor electrode, and the second capacitor electrode being level.
 12. The device of claim 11 further comprising: a third semiconductor fin over the substrate; and a third capacitor electrode over the third semiconductor fin, a width of the third capacitor electrode being less than or equal to a width of the third semiconductor fin, the dielectric layer being disposed around the third semiconductor fin and the third capacitor electrode, top surfaces of the dielectric layer and the third capacitor electrode being level.
 13. The device of claim 12 further comprising: a first conductive feature electrically connected to the first capacitor electrode and the third capacitor electrode; and a second conductive feature electrically connected to the second capacitor electrode.
 14. The device of claim 11 further comprising: a third semiconductor fin over the substrate, the dielectric layer being disposed around the third semiconductor fin; and a gate electrode over the third semiconductor fin and the dielectric layer.
 15. The device of claim 11 further comprising: a first dielectric layer around the first capacitor electrode, a combined width of the first dielectric layer and the first capacitor electrode being equal to the width of the first semiconductor fin; and a second dielectric layer around the second capacitor electrode, a combined width of the second dielectric layer and the second capacitor electrode being equal to the width of the second semiconductor fin.
 16. A device comprising: a substrate having a top major surface; a capacitor dielectric layer on the top major surface of the substrate; a first capacitor electrode in the capacitor dielectric layer, the first capacitor electrode extending from a bottommost surface of the capacitor dielectric layer to a topmost surface of the capacitor dielectric layer; a second capacitor electrode in the capacitor dielectric layer, the second capacitor electrode extending from the bottommost surface of the capacitor dielectric layer to the topmost surface of the capacitor dielectric layer; a first conductive feature electrically connected to the first capacitor electrode; and a second conductive feature electrically connected to the second capacitor electrode.
 17. The device of claim 16 further comprising: a semiconductor fin extending from the substrate, the capacitor dielectric layer surrounding the semiconductor fin; a gate electrode over a channel region of the semiconductor fin; a source region adjacent a first side of the channel region; and a drain region adjacent a second side of the channel region.
 18. The device of claim 16 further comprising: a first dielectric layer along sidewalls of the first capacitor electrode; and a second dielectric layer along sidewalls of the second capacitor electrode.
 19. The device of claim 18, wherein the first dielectric layer and the second dielectric layer comprise silicon oxide or a high-k dielectric comprising a metal oxide.
 20. The device of claim 16, wherein the first capacitor electrode and the second capacitor electrode comprise aluminum, copper, tungsten, titanium, a metal silicide, a conductive ceramic, doped silicon, or a combination thereof. 